Erbium Luminescence in Silicon

Rise-time and fall-time profile of erbium luminescence in silicon

Shockley-Read-Hall recombination kinetics has been applied to explain the luminescence mechanism of erbium luminescence in silicon. Erbium atoms in silicon have been considered as recombination centers with specific values of capture and emission coefficients. Electron-hole recombination through these levels has been considered to be the origin of erbium excitation. Equating the capture and emi...

Exciton–erbium coupling and the excitation dynamics of Er3+ in erbium- doped silicon-rich silicon oxide

Luminescence of silicon crystallites

Erbium doped silicon nanoclusters for Microphotonics

To my parents Cover: contour plot showing the simulated number of excited Er ions per Si nan-ocluster, as a function of Er concentration and pump power. Brighter gray tones represent higher values. More details can be found in Fig. 4.26 within this thesis, on page 102. The work described in this thesis was mainly performed at the Laboratory for MAterials and Technologies for the Information and...

Luminescence from amorphous silicon nanostructures.

We present a model of size-dependent luminescence from a-Si:H and show that a blueshift of the luminescence energy and a general increase in luminescence quantum efficiency are predicted as structure size decreases. In contrast to bulk a-Si:H structures, highly confined a-Si:H exhibits visible luminescence peak energies and high radiative quantum efficiency at room temperature, which is insensi...